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| March 1999 FDV301N Digital FET , N-Channel General Description This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. Features 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 @ VGS= 2.7 V RDS(ON) = 4 @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one DMOS FET. SOT-23 Mark:301 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 INVERTER APPLICATION Vcc D D OUT IN G S GND G S Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted FDV301N Units VDSS, VCC VGSS, VI ID, IO PD TJ,TSTG ESD Drain-Source Voltage, Power Supply Voltage Gate-Source Voltage, VIN Drain/Output Current - Continuous 25 8 0.22 0.5 V V A Maximum Power Dissipation Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Thermal Resistance, Junction-to-Ambient 0.35 -55 to 150 6.0 W C kV THERMAL CHARACTERISTICS RJA 357 C/W (c) 1999 Fairchild Semiconductor Corporation FDV301N Rev.F Inverter Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units IO (off) VI (off) VI (on) RO (on) Zero Input Voltage Output Current Input Voltage Output to Ground Resistance VCC = 20 V, VI = 0 V VCC = 5 V, IO = 10 A VO = 0.3 V, IO = 0.005 A VI = 2.7 V, IO = 0.2 A 1 4 1 0.5 5 A V V Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25 o C VDS = 20 V, VGS = 0 V TJ = 55C VGS = 8 V, VDS= 0 V ID = 250 A, Referenced to 25 o C VDS = VGS, ID = 250 A VGS = 2.7 V, ID = 0.2 A TJ =125C VGS = 4.5 V, ID = 0.4 A 25 25 1 10 100 V mV / oC A A nA mV / oC 1.5 5 9 4 A 0.2 9.5 6 1.3 S pF pF pF 8 15 8 8 0.7 ns ns ns ns nC nC nC 0.29 A V V BVDSS/TJ IDSS IGSS Gate - Body Leakage Current (Note) ON CHARACTERISTICS VGS(th)/TJ VGS(th) RDS(ON) Gate Threshold Voltage Temp. Coefficient Gate Threshold Voltage Static Drain-Source On-Resistance -2.1 0.65 0.85 3.8 6.3 3.1 0.2 ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note) VGS = 2.7 V, VDS = 5 V VDS = 5 V, ID= 0.4 A VDS = 10 V, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 6 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 3.2 6 3.5 3.5 VDS = 5 V, ID = 0.2 A, VGS = 4.5 V 0.49 0.22 0.07 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.29 A (Note) 0.8 1.2 Note: Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDV301N Rev.F Typical Electrical Characteristics 0 .5 1 .4 V I D , DRAIN-SOURCE CURRENT (A) 0 .4 GS = 4.5V 4 .0 R DS(on ) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 .5 3 .0 2 .7 VGS = 2 .0V 1 .2 0 .3 2 .5 2 .5 1 2 .7 3 .0 3 .5 0 .2 2 .0 0 .8 4 .0 4 .5 0 .1 1 .5 0 0 0 .5 V DS 0 .6 1 1 .5 2 , DRAIN-SOURCE VOLTAGE (V) 2 .5 3 0 0 .1 0 .2 0 .3 I D , DRAIN CURRENT (A) 0 .4 0 .5 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 R DS(on) , ON-RESISTANCE (OHM) 15 DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED 1.6 1.4 1.2 1 0.8 0.6 -50 I D = 0.2A VGS = 2.7 V ID = 0.2A 12 25C 9 125C 6 3 0 2 2.5 3 3.5 4 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To-Source Voltage. 0 .2 V DS = 5.0V 0 .1 5 T = -55C J 25C I S, REVERSE DRAIN CURRENT (A) 0.5 V GS = 0V 125C I D , DRAIN CURRENT (A) 0.2 0.1 TJ = 125C 25C 0 .1 0.01 -55C 0 .0 5 0.001 0 0 .5 V 1 GS 1 .5 2 , GATE TO SOURCE VOLTAGE (V) 2 .5 0.0001 0.2 0.4 0.6 0.8 1 V , BODY DIODE FORW A RD VOLTAGE (V) SD 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV301N Rev.F Typical Electrical And Thermal Characteristics 5 V GS , GATE-SOURCE VOLTAGE (V) 30 I D = 0.2A 4 VDS = 5V 10V 15V CAPACITANCE (pF) 20 10 C iss C oss 3 5 3 2 2 f = 1 MHz V GS = 0V C rss 0 .5 1 2 5 V , DRAIN TO SOURCE VOLTAGE (V) DS 10 25 1 1 0 .1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 1 0 .5 5 IT 1m 10 1s 10 s 0m s s 4 POWER (W) I , DRAIN CURRENT (A) 0 .2 0 .1 0 .0 5 R ( DS ON )L IM SINGLE PULSE R JA =357 C/W T A = 25C 3 2 VGS = 2.7V SINGLE PULSE RJ A = 357 C/ W TA = 25C 1 V DS DC 1 D 0 .0 2 0 .0 1 0 .5 2 5 10 15 , DRAI N -SOURCE VOLTAGE (V) 25 35 0 0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIM E (sec) 1 10 D = 0.5 0 .2 0 .1 0 .05 0 .02 0.01 Single Pulse P(pk) R JA (t) = r(t) * R JA R JA = 357 C/W t1 TJ - T t2 =P * R (t) A JA Duty Cycle, D = t1 /t 2 100 300 Figure 11. Transient Thermal Response Curve. FDV301N Rev.F TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. |
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